SUD50N02-06 vishay siliconix new product document number: 71136 s-01665erev. b, 31-jul-00 www.vishay.com 2-1 n-channel 20-v (d-s), 175 c mosfet
v ds (v) r ds(on) ( ) i d (a) a, b 20 0.006 @ v gs = 4.5 v 30 20 0.009 @ v gs = 2.5 v 25 d g s n-channel mosfet to-252 s gd top view drain connected to tab order number: SUD50N02-06
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current a, b t a = 25 c i d 30 a continuous drain current a , b t a = 100 c i d 21 a pulsed drain current i dm 100 a continuous source current (diode conduction) a, b i s 30 maximum power dissipation t c = 25 c p d 100 w maximum power dissipation t a = 25 c p d 8.3 a, b w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit maximum junction to ambient a t 10 sec. r hja 15 18 c/w maximum junction-to-ambient a steady state r thja 40 50 c/w maximum junction-to-case r thjc 1.2 1.5 notes a. surface mounted on 1o x 1o fr4 board b. t 10 sec.
SUD50N02-06 vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 71136 s-01665erev. b, 31-jul-00
parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 20 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 4.5 v 50 a dis os r i b v gs = 4.5 v, i d = 30 a 0.006 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d =30 a, t j = 125 c 0.009 v gs = 2.5 v, i d = 20 a 0.009 forward transconductance b g fs v ds = 5 v, i d = 30 a 20 s dynamic a input capacitance c iss 6600 f output capacitance c oss v gs = 0 v, v ds = 20 v, f = 1 mhz 1150 pf reverse transfer capacitance c rss 600 total gate charge c q g v10vv45vi50a 65 130 c gate-source charge c q gs v ds = 10 v, v gs = 4.5 v, i d = 50 a 13 nc gate-drain charge c q gd 14 turn-on delay time c t d(on) v10vr02 25 40 rise time c t r v dd = 10 v, r l = 0.2 i50av 45vr25 120 180 ns turn-off delay time c t d(off) dd , l i d 50 a, v gen = 4.5 v, r g = 2.5 80 120 ns fall time c t f 100 150 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 45 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
SUD50N02-06 vishay siliconix new product document number: 71136 s-01665erev. b, 31-jul-00 www.vishay.com 2-3
0 3 6 9 12 0 30 60 90 120 150 0 40 80 120 160 0 20406080100 0 0.002 0.004 0.006 0.008 0.010 0 20406080100 0 20 40 60 80 100 120 0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 0246810 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) v gs transconductance (s) g fs 25 c 55 c t c = 125 c v ds = 10 v i d = 50 a v gs = 2.5 v c rss t c = 55 c 25 c 125 c v gs = 4.5 v on-resistance ( r ds(on) ) drain current (a) i d i d drain current (a) 0 2000 4000 6000 8000 10000 0 4 8 12 16 20 c iss c oss v gs = 4.5, 4 v 3.5 v 3 v 2.5 v 2 v 1.5 v 1 v
SUD50N02-06 vishay siliconix new product www.vishay.com faxback 408-970-5600 2-4 document number: 71136 s-01665erev. b, 31-jul-00
0 0.4 0.8 1.2 1.6 2.0 50 25 0 25 50 75 100 125 150 175 on-resistance vs. junction temperature source-drain diode forward voltage t j junction temperature ( c) v sd source-to-drain voltage (v) source current (a) i s 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 4.5 v i d = 30 a t j = 25 c t j = 150 c (normalized) on-resistance ( r ds(on) ) 0
0 8 16 24 32 40 0 25 50 75 100 125 150 175 safe operating area v ds drain-to-source voltage (v) 1000 10 0.1 1 10 100 0.01 100 maximum avalanche drain current vs. ambient temperature t a case temperature ( c) drain current (a) i d 1 ms 10 s 100 s drain current (a) i d 1 0.1 limited by r ds(on) t a = 25 c single pulse 10 ms 100 ms dc 1 s 10 s 100 s 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 10 600 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 100
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